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          RB886CS Diodes 1/2 Schottky barrier diode RB886CS 』Applications 』External dimensions (Unit : mm) 』Land size figure (Unit : mm) High frequency detection VMN2 0.55 0.5 0.45 0.45 』Features 1) Ultra small mold type. (VMN2) 2) Low Ct and high detection efficiency. 』Construction 』Structure Silicon epitaxial planar ROHM : VMN2 dot (year week factory) + day 』Taping specifications (Unit : mm) 』Absolute maximum ratings (Ta=25°C) 』Electrical characteristics (Ta=25°C) 0.16±0.05 0.37±0.03 0.6±0.05 0.35±0.1 0.9±0.05 1.0±0.05 0.156 0.7±0.05 4.0±0.1 2±0.05 φ0.5 4±0.1 2±0.05 φ1.55 1.75±0.1 8.0±0.2 3.5±0.05 1.1±0.05 0.2±0.05 0.52 Symbol Unit VR V IF mA Tj ℃ Tstg ℃ Parameter Reverse voltage Average rectified forward current -40 to +125 Limits 5.0 10 Junction temperature Storage temperature 125 Symbol Min. Typ. Max. Unit VF - - 0.35 V IF=1.0mA IR - - 120 μA VR=5.0V Capacitance between terminals Ct - 0.53 0.80 pF VR=1.0V , f=1MHz Conditions Reverse current Parameter Forward voltage |